Design the circuit in the provided circuit image to obtain a current $I_D$ of $80 \mu \mathrm{~A}$. Find the value required for $R$, and find the de voltage $V_D$. Let the NMOS transistor have $V_t=0.6 \mathrm{~V}, \mu_n C_{0 . x}=200 \mu \mathrm{~A} / \mathrm{V}^2$, $L=0.8 \mu \mathrm{~m}$, and $W=4 \mu \mathrm{~m}$. Neglect the channel-length modulation elfect (i.e., assume $\lambda=0$ ).